Exploring the temporally resolved electron density evolution in EUV induced plasmas

We measured for the first time the electron density in an Extreme Ultra-Violet induced plasma. This is achieved in a low-pressure argon plasma by using a method called microwave cavity resonance spectroscopy. The measured electron density just after the EUV pulse is $2.6\cdot10^{16}$ m$^{-3}$. This is in good agreement with a theoretical prediction from photo ionization, which yields a density of $4.5\cdot10^{16}$ m$^{-3}$. After the EUV pulse the density slightly increase due to electron impact ionization. The plasma (i.e. electron density) decays in tens of microseconds.Comment: 3 pages, 4 figure

Revealing latent trajectories of (intended) train travel during and after COVID-19

This study investigates whether the decline in public transit ridership is a temporary phenomenon or indicative of a structural shift in travel patterns and attitudes. We estimate a latent class trajectory model using data from a comprehensive and large-scale survey administered by the Dutch national train operator conducted at eight different points in time after the onset of the pandemic. Six latent trajectories in train use and stated future intentions to use the train are revealed, showing different ‘recovery’ pathways. Whereas low-educated frequent commuters travel almost as much as before, highly educated frequent commuters and mixed-purpose travellers still travel much less, even in the last wave when all restrictions are lifted. The results indicate that travellers belonging to these classes have structurally changed their behaviour. The shift to working from home is more pronounced than the shift to private car use

The chemistry of a CCl2F2 radio frequency discharge

A systematic study of the chemistry of stable molecules and radicals in a low pressure CCl2F2 radio frequency discharge for dry Si etching has been performed. Various particle densities have been measured and modeled. The electron density, needed as an input parameter to model the CCl2F2 dissociation, is measured by a microwave cavity method. The densities of stable molecules, like CClF3, CF4, 1,2-C2Cl2F4 and the etch product SiF4, are measured by Fourier transform absorption spectroscopy. The density of the CF2 radical is measured by means of absorption spectroscopy with a tunable diode laser. Its density is in the order of 1019 m-3. All density measurements are presented as a function of various plasma parameters. Moreover, optical emission intensities of Cl and F have been recorded as a function of plasma parameters. It appears that the feed gas (CCl2F2) is substantially dissociated (about 70%–90%) in the discharge. Based on the obtained data the dissociation rates of several molecules have been estimated. The measured total dissociation rate of CCl2F2 is 8×10-15 m3¿s-1. For this molecule the dissociation rate is substantially higher than the dissociative attachment rate (10-15 m3¿s-1). The dissociation rate for CClF3 is 2×10-15 m3¿s-1 and for CF4 about 3×10-16 m3¿s-1. The total dissociation rate of C2Cl2F4 is higher than 5 ×10-15 m3¿s-1, of which 2.5±0.5 × 10-15 m3¿s-1 is due to dissociative attachment. Furthermore it has been found that the presence of a silicon wafer strongly affects the plasma chemistry. Optical emission measurements show that the densities of halogen radicals are significantly depleted in presence of Si. Moreover, the densities of several halocarbon molecules display a negative correlation with the density of the etch product SiF4. © 1995 American Vacuum Societ

In situ ellipsometry during plasma etching of silica films on Si

The etching of SiO2 films on a Si substrate in an rf plasma in CF4 has been studied with i n s i t uellipsometry. The etch rate was measured as a function of flow, rf power and pressure. An accurate analysis of the experimental data using numerical simulations based on multilayermodels has yielded information both on the refractive index of the etched SiO2 film and on the existence of a top layer. It could be established that a layer is present on top of the SiO2 during etching, which is probably caused by roughening of the SiO2 layer. Furthermore at high pressures (>8 Pa) it was demonstrated that after the complete removal of the SiO2 film a polymer layer starts growing on the Si substrate